Semiconductor apparatus

摘要

A semiconductor apparatus includes a p-type doped layer, an n-type doped layer, and an internal electrical connection layer that is deposited and electrically coupled between the p-type doped layer and the n-type doped layer. In one embodiment, the internal electrical connection layer includes a group IV element and a nitrogen element, and the number of atoms of the group IV element and the nitrogen element is greater than 50% of the total number of atoms in the internal electrical connection layer. In another embodiment, the internal electrical connection layer includes carbon element with a concentration greater than 1017 atoms/cm3. In a further embodiment, the internal electrical connection layer is formed at a temperature lower than those of the p-type doped layer and the n-type doped layer.

主权项

1. A semiconductor apparatus, comprising:
a p-type doped layer; an n-type doped layer; and an internal electrical connection layer deposited between the p-type doped layer and the n-type doped layer, and electrically coupled between the p-type doped layer and the n-type doped layer; wherein the internal electrical connection layer includes a group IV element and a nitrogen element, and the number of atoms of the group IV element and the nitrogen element is greater than 50% of the total number of atoms in the internal electrical connection layer; wherein the internal electrical connection layer is a defect-induced internal electrical connection layer, which provides a first defect density with respect to a second defect density at a growth surface of the defect-induced internal electrical connection layer, the first defect density being at least five times the second defect density, and the defect-induced internal electrical connection layer having a thickness less than or equal to 100 nanometers.