发明名称 Finger metal oxide metal capacitor structures
摘要 A finger metal oxide metal (MOM) capacitor includes an outer conducting structure defined in a plurality of metal layers and a plurality of via layers of an integrated circuit. First and second side portions include a plurality of first and second finger sections extending in the plurality of metal layers and first and second hole vias connecting the first and second finger sections, respectively. A middle portion connects the first and second side portions. An inner conducting structure is defined in the plurality of metal layers and the plurality of via layers of the integrated circuit. A plurality of “T”-shaped sections are defined in the plurality of metal layers and third hole vias connecting the plurality of “T”-shaped sections. Middle portions of the plurality of “T”-shaped sections extend towards the middle portion and between the first side portion and the second side portion of the outer conducting structure.
申请公布号 US8963286(B2) 申请公布日期 2015.02.24
申请号 US201213465605 申请日期 2012.05.07
申请人 Marvell International Ltd. 发明人 Lin Hung Sheng;Hatanaka Shingo;Jamal Shafiq M.
分类号 H01L21/02;H01L23/522;H01L49/02 主分类号 H01L21/02
代理机构 代理人
主权项 1. A finger metal oxide metal (MOM) capacitor, comprising: an outer conducting structure defined in a plurality of metal layers and a plurality of via layers of an integrated circuit, the outer conducting structure including: a first side portion including a plurality of first finger sections extending in the plurality of metal layers and first hole vias connecting the first finger sections;a second side portion including a plurality of second finger sections extending in the plurality of metal layers and second hole vias connecting the second finger sections; anda middle portion connecting the first and second side portions; an inner conducting structure defined in the plurality of metal layers and the plurality of via layers of the integrated circuit, the inner conducting structure including: a plurality of “T”-shaped sections defined in the plurality of metal layers and third hole vias connecting the plurality of “T”-shaped sections, wherein middle portions of the plurality of “T”-shaped sections extend towards the middle portion and between the first side portion and the second side portion of the outer conducting structure;a plurality of floating finger sections arranged in middle ones of the plurality of metal layers, wherein each one of the floating finger sections has a first end adjacent to the middle portion of the outer conducting structure,has a second end adjacent to a respective one of the middle portions of the plurality of “T”-shaped sections that is in a same one of the plurality of metal layers as the one of the floating finger sections,extends in a lengthwise direction from the first end adjacent to the middle portion of the outer conducting structure towards the second end adjacent to the respective one of the middle portions of the plurality of “T”-shaped sections that is in the same one of the plurality of metal layers, andis axially aligned in the lengthwise direction, and coaxial, with the respective one of the middle portions of the plurality of “T”-shaped sections that is in the same one of the plurality of metal layers; andoxide arranged between the outer conducting structure and the inner conducting structure.
地址 Hamilton BM