发明名称 |
Thin film transistor, array substrate, and manufacturing method thereof |
摘要 |
A thin film transistor, an array substrate, and a manufacturing method thereof. The manufacturing method comprises: forming a buffer layer and an active layer sequentially on a substrate, and forming an active region through a patterning process; forming a gate insulating layer and a gate electrode sequentially; forming Ni deposition openings; forming a dielectric layer having source/drain contact holes in a one-to-one correspondence with the Ni deposition openings; and forming source/drain electrodes which are connected with the active region via the source/drain contact holes and the Ni deposition openings. |
申请公布号 |
US8963157(B2) |
申请公布日期 |
2015.02.24 |
申请号 |
US201213994244 |
申请日期 |
2012.11.13 |
申请人 |
BOE Technology Group Co., Ltd. |
发明人 |
Liang Yinan |
分类号 |
H01L29/10;H01L21/02;H01L29/66;H01L29/786;H01L27/12 |
主分类号 |
H01L29/10 |
代理机构 |
Ladas & Parry LLP |
代理人 |
Ladas & Parry LLP |
主权项 |
1. A manufacturing method of a thin film transistor, comprising steps of:
forming a buffer layer and an active layer sequentially on a substrate, and forming an active region through a patterning process on the active layer; forming a gate insulating layer and a gate electrode sequentially; forming Ni deposition openings; forming a dielectric layer having source/drain contact holes in a one-to-one correspondence with the Ni deposition openings; and forming source/drain electrodes which are connected with the active region via the source/drain contact holes and the Ni deposition openings; wherein materials of the active layer and the gate electrode are amorphous silicon thin film, respectively; between the step of forming the Ni deposition openings and the step of forming the dielectric layer the method further comprises a step of: crystallizing the amorphous silicon thin film material of both the active layer and the gate electrode into polysilicon thin film material by utilizing a metal induced lateral crystallization method. |
地址 |
Beijing CN |