TFT, shift register, scanning signal line drive circuit, switch circuit, and display device

摘要

A distance (d1) from an edge of a first region (R) at places (D) where branch electrodes (4b) extending, which branch off from an electrode line (4a) of a second source/drain electrode (4), start to overlap with a first region (R) to the electrode line (4a) is 5 μm or more. This realizes a TFT including a comb-shaped source/drain structure that enables easy repair of a source-drain leakage.

主权项

1. A TFT comprising a gate electrode, a first source/drain electrode, and a second source/drain electrode, one of the first source/drain electrode and the second source/drain electrode being a source electrode and the other being a drain electrode,
the TFT including an i layer and a stack in which an n+ layer is stacked on the i layer, the i layer and the stack being formed from a semiconductor material and disposed above the gate electrode but with a dielectric layer under the i layer and the stack in a layer-thickness direction, the first source/drain electrode being disposed on the n+ layer in a first region, the first region being a panel in-plane region where the i layer is provided, the second source/drain electrode including an electrode line provided outside the first region and a plurality of branch electrodes branching off and extending from the electrode line, the branch electrodes extending from the electrode line onto the n+ layer in the first region, the i layer having a pattern provided between the first source/drain electrode and the branch electrodes in the first region in a panel in-plane direction, the pattern including no n+ layer in the first region, wherein: when the gate electrode is seen in the layer-thickness direction, an edge of the first region at first places where the branch electrodes extending start to overlap with the first region is more away from the electrode line than an edge of the gate electrode at second places where the branch electrodes extending start to overlap with a region of the gate electrode; and a second distance from the edge of the gate electrode at the second places to the electrode line is 5 μm or more wherein: the branch electrode is provided with a cutout narrowing a line width thereof, the cutout being provided on one side or both sides of the branch electrode in a width direction thereof at a part immediately in front of the second place.