Manufacturing method of semiconductor device having semiconductor layers with different thicknesses

摘要

A semiconductor device has a first element region, a second element region, and a first isolation region in a thin film region and a third element region, a fourth element region, and a second isolation region in a thick film region. It is manufactured with step (a) of providing a substrate having a silicon layer formed via an insulating layer, step (b) of forming element isolation insulating films in the silicon layer in the first isolation region and the second isolation region of the substrate step (c) of forming a hard mask in the thin film region, step (d) of forming silicon films over the silicon layer exposed from the hard mask in the third element region and the fourth element region, and step (e) of forming element isolation insulating films between the silicon films in the third element region and the fourth element region.

主权项

1. A manufacturing method of a semiconductor device, which includes a thin film region having a first semiconductor film with a first film thickness and a thick film region having a second semiconductor film with a second film thickness thicker than the first film thickness; has a first element region, a second element region, and a first isolation region for isolating between the first element region and the second element region, the first element region, the second element region, and the first isolation region being formed in the thin film region; and has a third element region, a fourth element region, and a second isolation region for isolating between the third element region and the fourth element region, the third element region, the fourth element region, and the second isolation region being formed in the thick film region, the method comprising the steps of:
(a) providing a substrate having the first semiconductor film with the first film thickness formed over a supporting substrate via a first insulating film; (b) forming a second insulating film in the first semiconductor film with the first film thickness in the first isolation region and the second isolation region of the substrate; (c) forming a third insulating film in the thin film region; (d) forming third semiconductor films over the first semiconductor film with the first film thickness in the third element region and the fourth element region exposed from the third insulating film; and (e) forming a fourth insulating film between the third semiconductor films in the third element region and the fourth element region.