发明名称 |
Implementing twisted pair waveguide for electronic substrates |
摘要 |
A method and structures are provided for implementing an impedance-matched, low inductance, 3-dimensional (3D) twisted-pair within a given dielectric material layer. A dielectric material layer is loaded with an electrically insulating metal spinel compound at a set loading level. Upon exposure to a focused laser beam, the spinel is converted to a metallic particle with an electrical conductivity suitable for various applications. An impedance-matched, low inductance, 3-dimensional (3D) twisted-pair is generated using a laser direct structuring process with a fine depth control achieved with a laser. |
申请公布号 |
US8965159(B1) |
申请公布日期 |
2015.02.24 |
申请号 |
US201314074145 |
申请日期 |
2013.11.07 |
申请人 |
International Business Machines Corporation |
发明人 |
Doyle Matthew S.;Kuczynski Joseph;Splittstoesser Kevin A.;Tofil Timothy J. |
分类号 |
G02B6/44 |
主分类号 |
G02B6/44 |
代理机构 |
|
代理人 |
Pennington Joan |
主权项 |
1. A method for implementing a twisted-pair structure within a given dielectric material layer comprising:
providing a dielectric material layer within an electronic packaging; loading the dielectric material layer with an electrically insulating metal spinel compound at a set loading level; and using a laser direct structuring process exposing the electrically insulating metal spinel compound to a focused laser beam, converting the spinel to a metallic particle with a set electrical conductivity for generating a twisted-conductor pair structure. |
地址 |
Armonk NY US |