Defective memory column replacement with load isolation

摘要

Exemplary embodiments of the present invention disclose a method and system for substituting a group of memory cells for a defective group of memory cells in a memory. In a step, an exemplary embodiment replaces a signal path to a group of defective memory cells with a signal path to a redundant group of memory cells. In another step, an exemplary embodiment isolates the signal path to the redundant group of memory cells from a load imposed by the signal path to the replaced group of defective memory cells.

主权项

1. A system for substituting a group of memory cells in a memory, the system comprising:
one or more groups of memory cells; one or more redundant groups of memory cells; circuit to replace a signal path to a defective group of memory cells with a signal path to a redundant group of memory cells; circuit to isolate the signal path to the redundant group of memory cells from a load imposed by the signal path to the defective group of memory cells that has been replaced; wherein the system is operable to: replace the signal path to a group of defective memory cells with the signal path to a redundant group of memory cells; isolate the signal path to the redundant group of memory cells from a load imposed by the replaced signal path to the group of defective memory cells; and in response to blowing a fuse, triggering a logic transmission gate to cause a transistor to conduct and pull the replaced signal path to the group of defective memory cells to ground.