Method of fabricating semiconductor devices

摘要

A method of fabricating a semiconductor device includes etching a substrate to form a field trench defining an active region and a lower gate pattern on the active region, the lower gate pattern including a tunneling insulating pattern and a lower gate electrode pattern, filling a field insulating material in the field trench to form a field region, forming an upper gate pattern on the lower gate pattern, sequentially forming a stopping layer and a buffer layer on the field region and the upper gate pattern, forming a first resistive pattern on the buffer layer of the field region, and forming a second resistive pattern on the buffer layer on the upper gate pattern, forming an interlayer insulating layer covering the first and second resistive patterns, and performing a planarization process to remove a top surface of the interlayer insulating layer and to remove the second resistive pattern.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
etching a substrate to form a field trench defining an active region and a lower gate pattern on the active region, the lower gate pattern including a tunneling insulating pattern and a lower gate electrode pattern; filling a field insulating material in the field trench to form a field region; forming an upper gate pattern on the lower gate pattern; sequentially forming a stopping layer and a buffer layer on the field region and the upper gate pattern; forming a first resistive pattern on the buffer layer of the field region, and forming a second resistive pattern on the buffer layer on the upper gate pattern; forming an interlayer insulating layer covering the first and second resistive patterns; and performing a planarization process to remove a top surface of the interlayer insulating layer and to remove the second resistive pattern.