发明名称 Photoelectric transducer and solid-state imaging apparatus
摘要 Provided is a photoelectric transducer having a photoelectric conversion material layer including an organic material with higher sensitivity and response than conventional one.;The photoelectric transducer includes (a-1) first and second electrodes 21 and 22 separated from each other and (a-2) a photoelectric conversion material layer 30 provided between the first and second electrodes 21 and 22, wherein the photoelectric conversion material layer 30 includes an azo moiety-containing thiazole compound represented by the structural formula (1).
申请公布号 US8963142(B2) 申请公布日期 2015.02.24
申请号 US201113808014 申请日期 2011.04.25
申请人 Sony Corporation 发明人 Nihei Ayumi;Murata Masaki
分类号 H01L51/00;C07D277/20;C07D277/50;C09B29/033;C09B29/12;C09K11/06;H05B33/02;H01L27/30;H01L51/42 主分类号 H01L51/00
代理机构 Wolf, Greenfield & Sacks, P.C. 代理人 Wolf, Greenfield & Sacks, P.C.
主权项 1. A solid-state imaging apparatus comprising: a plurality of photoelectric transducers, each photoelectric transducer comprising: (a-1) first and second electrodes separated from each other; (a-2) a first photoelectric conversion material layer provided between the first and second electrodes, wherein the first photoelectric conversion material layer comprises a first azo moiety-containing thiazole compound represented by the following structural formula (1): where X and Y each represent a hydrogen atom or a substituent other than a hydrogen atom, and R1 represents an alkyl group, an alkenyl group, an alkynyl group, or an aryl group; and (a-3) at least one electrical circuit in electrical communication with each photoelectric transducer.
地址 Tokyo JP