发明名称 |
Photoelectric transducer and solid-state imaging apparatus |
摘要 |
Provided is a photoelectric transducer having a photoelectric conversion material layer including an organic material with higher sensitivity and response than conventional one.;The photoelectric transducer includes (a-1) first and second electrodes 21 and 22 separated from each other and (a-2) a photoelectric conversion material layer 30 provided between the first and second electrodes 21 and 22, wherein the photoelectric conversion material layer 30 includes an azo moiety-containing thiazole compound represented by the structural formula (1). |
申请公布号 |
US8963142(B2) |
申请公布日期 |
2015.02.24 |
申请号 |
US201113808014 |
申请日期 |
2011.04.25 |
申请人 |
Sony Corporation |
发明人 |
Nihei Ayumi;Murata Masaki |
分类号 |
H01L51/00;C07D277/20;C07D277/50;C09B29/033;C09B29/12;C09K11/06;H05B33/02;H01L27/30;H01L51/42 |
主分类号 |
H01L51/00 |
代理机构 |
Wolf, Greenfield & Sacks, P.C. |
代理人 |
Wolf, Greenfield & Sacks, P.C. |
主权项 |
1. A solid-state imaging apparatus comprising:
a plurality of photoelectric transducers, each photoelectric transducer comprising: (a-1) first and second electrodes separated from each other; (a-2) a first photoelectric conversion material layer provided between the first and second electrodes, wherein the first photoelectric conversion material layer comprises a first azo moiety-containing thiazole compound represented by the following structural formula (1): where X and Y each represent a hydrogen atom or a substituent other than a hydrogen atom, and R1 represents an alkyl group, an alkenyl group, an alkynyl group, or an aryl group; and (a-3) at least one electrical circuit in electrical communication with each photoelectric transducer. |
地址 |
Tokyo JP |