Semiconductor light emitting element and light emitting device

摘要

In a semiconductor light emitting element outputting light indicating green color by using a group III nitride semiconductor, light emission output is improved. A semiconductor light emitting element includes: an n-type cladding layer containing n-type impurities (Si); a light emitting layer laminated on the n-type cladding layer; and a p-type cladding layer containing p-type impurities and laminated on the light emitting layer. The light emitting layer has a barrier layer including first to fifth barrier layers and a well layer including first to fourth well layers, and has a multiple quantum well structure to sandwich one well layer by two barrier layers. The light emitting layer is configured such that the first to fourth well layers are set to have a composition to emit green light, and the first barrier layer is doped with n-type impurities, whereas the other barrier layers are not doped with n-type impurities.

主权项

1. A semiconductor light emitting element comprising:
an n-type semiconductor layer that is composed of a group III nitride semiconductor doped with an n-type impurity; a light emitting layer that is laminated on the n-type semiconductor layer and composed of a group III nitride semiconductor, the light emitting layer emitting light having a wavelength of not less than 500 nm and not more than 570 nm by passing a current; and a p-type semiconductor layer that is laminated on the light emitting layer and composed of a group III nitride semiconductor doped with a p-type impurity, wherein the light emitting layer comprises:
at least four well layers that are composed of a group III nitride semiconductor; andat least five barrier layers that are composed of a group III nitride semiconductor whose band gap is larger than a band gap of the group III nitride semiconductor of the well layers, the barrier layers sandwiching each of the at least four well layers from both sides, being connected to the n-type semiconductor layer at an interface portion with the n-type semiconductor layer and being connected to the p-type semiconductor layer at an interface portion with the p-type semiconductor layer, and wherein, of the at least five barrier layers, one n-side barrier layer provided at the interface portion with the n-type semiconductor layer is doped with the n-type impurity, and, of the at least five barrier layers, at least four barrier layers except for the n-side barrier layer are not doped with the n-type impurity.