| 发明名称 | Memory circuit with transistors having different threshold voltages and method of operating the memory circuit | ||
| 摘要 | A memory circuit includes a memory cell, a data line coupled to the memory cell, a sense amplifier having an input terminal, a precharge circuit coupled to the input terminal of the sense amplifier, a first transistor of a first type, and a second transistor of the first type. The first transistor is coupled between the input terminal of the sense amplifier and the data line, and the second transistor is coupled between to the input terminal of the sense amplifier and the data line. The first transistor has a first threshold voltage, and the second transistor has a second threshold voltage lower than the first threshold voltage. | ||
| 申请公布号 | US8964485(B2) | 申请公布日期 | 2015.02.24 |
| 申请号 | US201213681030 | 申请日期 | 2012.11.19 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Yang Chou-Ying;Huang Yi-Cheng;Liu Shang-Hsuan |
| 分类号 | G11C7/00;G11C7/06;G11C7/10 | 主分类号 | G11C7/00 |
| 代理机构 | Lowe Hauptman & Ham, LLP | 代理人 | Lowe Hauptman & Ham, LLP |
| 主权项 | 1. A memory circuit comprising: a memory cell; a data line coupled to the memory cell; a sense amplifier having an input terminal; a precharge circuit coupled to the input terminal of the sense amplifier; a first transistor of a first type having a drain coupled to the input terminal of the sense amplifier and a source coupled to the data line, the first transistor having a first threshold voltage; and a second transistor of the first type having a drain coupled to the input terminal of the sense amplifier and a source coupled to the data line, the second transistor having a second threshold voltage lower than the first threshold voltage. | ||
| 地址 | TW | ||