Fractional bits in memory cells

摘要

Methods, devices, modules, and systems for programming memory cells can include storing charges corresponding to a data state that represents an integer number of bits in a set of memory cells. Programming memory cells can include storing a charge in a cell of the set, where the charge corresponds to a programmed state, where the programmed state represents a fractional number of bits, and where the programmed state denotes a digit of the data state as expressed by a number in base N, where N is equal to 2B, rounded up to an integer, and where B is equal to the fractional number of bits represented by the programmed state.

主权项

1. An apparatus, comprising:
a set of memory cells; and circuitry to:
sense each memory cell of the set of memory cells to determine a respective threshold level for each memory cell of the set, wherein the threshold level for a respective memory cell of the set corresponds to a non-integer number of bits of data stored in the respective memory cell and denotes a respective digit of a data state as expressed by a number in base N, where N is equal to 2B, rounded up to an integer, and where B is equal to the non-integer number of bits represented by the threshold level; andoutput an integer number of bits of data representing a combination of the threshold levels for the set and comprising the data state.