| 发明名称 | FinFET with bottom SiGe layer in source/drain | ||
| 摘要 | A FinFET includes a substrate, a fin structure on the substrate, a source in the fin structure, a drain in the fin structure, a channel in the fin structure between the source and the drain, a gate dielectric layer over the channel, and a gate over the gate dielectric layer. At least one of the source and the drain includes a bottom SiGe layer. | ||
| 申请公布号 | US8963258(B2) | 申请公布日期 | 2015.02.24 |
| 申请号 | US201313800817 | 申请日期 | 2013.03.13 |
| 申请人 | Taiwan Semiconductor Manufacturing Company | 发明人 | Yu Ming-Hua;Jeng Pei-Ren;Lee Tze-Liang |
| 分类号 | H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;H01L29/78;H01L29/66 | 主分类号 | H01L29/76 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A FinFET, comprising: a substrate having a major surface; a fin structure on the substrate, the fin extending from the major surface and having a topmost surface; a source in the fin structure, the source extending below the topmost surface of the fin; a drain in the fin structure, the drain extending below the topmost surface of the fin; a channel in the fin structure between the source and the drain; a gate dielectric layer over the channel; and a gate over the gate dielectric layer, wherein at least one of the source and the drain includes a bottom SiGe layer. | ||
| 地址 | Hsin-Chu TW | ||