Spin hall effect magnetic-RAM

摘要

A spin Hall effect magnetoresistive memory comprises apparatus of a three terminal magnetoresistive memory cell having an MTJ stack, a functional magnetic layer having a magnetization anti-parallel or parallel coupled with a recording layer magnetization in the MTJ stack, and a SHE-metal base layer. The control circuitry coupled through the bit line and the two select transistors to selected ones of the plurality of magnetoresistive memory elements to supply a reading current across the magnetoresistive element stack and two bottom electrodes and to supply a bi-directional spin Hall effect recording current, and accordingly to directly switch the magnetization of the functional magnetic coupling layer and indirectly switching the magnetization of the recording layer through the coupling between the functional magnetic coupling layer and the recording layer.

主权项

1. A three terminal SHE spin transfer magnetoresistive memory comprising a control circuitry and at least one memory cell comprising:
a SHE metal base layer provided on a surface of a substrate; a functional magnetic coupling layer provided on the top of the SHE base layer; a nonmagnetic coupling layer provided on the top surface of the functional magnetic coupling layer; a recording layer provided on the top surface of the non-magnetic layer and having magnetic anisotropy in a film plane and having a variable magnetization direction; a tunnel barrier layer provided on the top surface of the recording layer; a reference layer provided on the top surface of the tunnel barrier layer having magnetic anisotropy in a film plane and having an invariable magnetization direction; a cap layer provided on the top surface of the reference layer as an upper electric electrode; a first bottom electrode provided on a first side of the SHE metal layer and electrically connected to the SHE metal layer; a second bottom electrode provided on a second side of the SHE metal layer and electrically connected to the SHE metal layer; a bit line provided on the top surface of the cap layer; two CMOS transistors coupled the plurality of magnetoresistive memory elements through the two bottom electrodes. There is further provided circuitry connected to the bit line, and two select transistors of each magnetoresistive memory cell,The control circuitry coupled through the bit line and the two select transistors to selected ones of the plurality of magnetoresistive memory elements to supply a reading current across the magnetoresistive element stack and two bottom electrodes and to supply a bi-directional spin Hall effect recording current, and accordingly to directly switch the magnetization of the functional magnetic coupling layer and indirectly switching the magnetization of the recording layer through the coupling between the functional magnetic coupling layer and the recording layer.