| 发明名称 | Semiconductor light-emitting device and method for manufacturing same | ||
| 摘要 | According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion and a stacked body. The light-emitting portion is provided between the n-type and p-type semiconductor layers and includes a barrier layer and a well layer. The well layer is stacked with the barrier layer. The stacked body is provided between the light-emitting portion and the n-type semiconductor layer and includes a first layer and a second layer. The second layer is stacked with the first layer. Average In composition ratio of the stacked body is higher than 0.4 times average In composition ratio of the light-emitting portion. The layer thickness tb of the barrier layer is 10 nanometers or less. | ||
| 申请公布号 | US8963176(B2) | 申请公布日期 | 2015.02.24 |
| 申请号 | US201313835371 | 申请日期 | 2013.03.15 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Kimura Shigeya;Nago Hajime;Oka Toshiyuki;Tachibana Koichi;Hikosaka Toshiki;Nunoue Shinya |
| 分类号 | H01L33/00;H01L33/32;B82Y20/00;H01L33/04;H01L33/06;H01S5/32;H01S5/343 | 主分类号 | H01L33/00 |
| 代理机构 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A semiconductor light-emitting device comprising: an n-type semiconductor layer having a face equivalent to a C-surface and including a nitride semiconductor; a p-type semiconductor layer including a nitride semiconductor; a light-emitting portion provided between the n-type semiconductor layer and the p-type semiconductor layer and including: a barrier layer including InbGa1-bN (0≦b<1) and having a layer thickness tb (nanometers); and a well layer stacked with the barrier layer, including InwGa1-wN (0<w<1, b<w), and having a layer thickness tw (nanometers); and a stacked body provided between the light-emitting portion and the n-type semiconductor layer and including: a first layer including InxGa1-xN (0≦x<1) and having a layer thickness tx (nanometers); and a second layer stacked with the first layer, including InyGa1-yN (0<y≦1, x<y<w), and having a layer thickness ty (nanometers), an average In composition ratio of the stacked body being higher than 0.4 times and not higher than 0.7 times an average In composition ratio of the light-emitting portion, assuming that the average In composition ratio of the light-emitting portion is (w×tw+b×tb)/(tw+tb), and the average In composition ratio of the stacked body is (x×tx+y×ty)/(tx+ty), and the layer thickness tb of the barrier layer being 10 nanometers or less, a thickness of the stacked body being equal to or greater than a thickness of the light-emitting portion, a thickness of the first layer being thicker than 1 nanometer and thinner than 3 nanometers, and a thickness of the second layer being thicker than 0 nanometer and thinner than 2 nanometers. | ||
| 地址 | Minato-ku JP | ||