发明名称 Method of manufacturing transparent conductive film, the transparent conductive substrate using the film, as well as device using the substrate
摘要 By using a coating method, which is a method of manufacturing a transparent conductive film, with low-temperature heating lower than 300° C., a transparent conductive film with excellent transparency, conductivity, film strength, and resistance stability and a method of manufacturing this film are provided. In the method of manufacturing a transparent conductive film, a heat energy ray irradiating step is a step of irradiating with the energy rays while heating under an oxygen-containing atmosphere to a heating temperature lower than 300° C. to form the inorganic film, and the plasma processing step is a step of performing the plasma processing on the inorganic film under a non-oxidizing gas atmosphere at a substrate temperature lower than 300° C. to promote mineralization or crystallization of the film, thereby forming a conductive oxide fine-particle layer densely packed with conductive oxide fine particles having a metal oxide as a main component.
申请公布号 US8963146(B2) 申请公布日期 2015.02.24
申请号 US201013261283 申请日期 2010.11.05
申请人 Sumitomo Metal Mining Co., Ltd. 发明人 Yukinobu Masaya;Murayama Yuki;Nagano Takahito;Otsuka Yoshihiro
分类号 H01L29/10;C09D5/24;C09D1/00;C23C18/14 主分类号 H01L29/10
代理机构 代理人 Hespos Gerald E.;Porco Michael J.;Hespos Matthew T.
主权项 1. A method of manufacturing a transparent conductive film to be formed through following steps: coating a substrate with a coating liquid containing an organometallic compound to form a coating film; drying the coating film to form a dried coating film; irradiating the dried coating film with energy rays while heating the dried coating film under an oxygen-containing atmosphere having a dew-point temperature equal to or lower than −10° C. to a heating temperature less than 300° C. thereby removing an organic component contained in the dried coating film by decomposition and/or burning, thereby forming an inorganic film having an inorganic component, which is a metal oxide; and then plasma processing on the inorganic film under a non-oxidizing gas atmosphere at a substrate temperature less than 300° C. to further promote mineralization or crystallization of the film, thereby forming a conductive oxide fine-particle layer densely packed with conductive oxide fine particles, wherein the organometallic compound is formed from any one or more of an organic indium compound, an organic tin compound, and an organic zinc compound, and the metal oxide is any one or more of indium oxide, tin oxide, and zinc oxide.
地址 Tokyo JP