Semiconductor storage device and manufacturing method of semiconductor storage device

摘要

According to one embodiment, a columnar semiconductor, a floating gate electrode formed on a side surface of the columnar semiconductor via a tunnel dielectric film, and a control gate electrode formed to surround the floating gate electrode via a block dielectric film are provided.

主权项

1. A semiconductor storage device comprising:
a stacked structure in which control gate electrodes and first dielectric films are interlaminated; a columnar semiconductor that penetrates through the stacked structure in a first direction; floating gate electrodes between the columnar semiconductor and each of the control gate electrodes; a second dielectric film between the columnar semiconductor and each of the floating gate electrodes; a third dielectric film between each of the control gate electrodes and each of the floating gate electrodes; wherein an upper surface, a lower surface and a second side surface of each of the floating gate electrodes face each of the control gate electrodes, wherein the upper surface, the lower surface and the second side surface of each of the floating gate electrodes are surrounded by each of the control gate electrodes; wherein the control gate electrode is arranged around the columnar semiconductor and includes a groove into which the floating gate electrode is inserted.