Film deposition apparatus, film deposition method, computer readable storage medium for storing a program causing the apparatus to perform the method

摘要

A disclosed film deposition apparatus includes a susceptor having in one surface a substrate receiving portion provided rotatably in a chamber; a heating unit including plural independently controllable heating portions, thereby heating the susceptor; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

主权项

1. A film deposition apparatus for depositing a film on a substrate by carrying out a cycle of alternately supplying at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product in a chamber, the film deposition apparatus comprising:
a susceptor rotatably provided in the chamber; a substrate receiving portion in which the substrate is placed that is provided in one surface of the susceptor; a heating unit provided under the susceptor and including plural independently controllable heating portions, thereby heating the susceptor; a first reaction gas supplying portion configured to supply a first reaction gas to the one surface; a second reaction gas supplying portion configured to supply a second reaction gas to the one surface, the second reaction gas supplying portion being separated from the first reaction gas supplying portion along a rotation direction of the susceptor; a separation area located along the rotation direction between a first process area in which the first reaction gas is supplied and a second process area in which the second reaction gas is supplied; a center area that is located substantially in a center portion of the chamber in order to separate the first process area and the second process area, and that has an ejection hole that ejects a first separation gas along the one surface; and an evacuation opening provided in the chamber in order to evacuate the chamber; wherein the separation area includes a separation gas supplying portion that supplies a second separation gas, and a ceiling surface that creates in relation to the one surface of the susceptor a thin space in which the second separation gas may flow from the separation area to the process area side in relation to the rotation direction,
wherein the film deposition apparatus further comprises plural temperature sensors corresponding to the plural heating portions, wherein temperatures of parts in the susceptor that are heated by the corresponding heater portions are independently measured by the corresponding temperature sensors,wherein the temperature sensors comprise a radiation thermometer provided under the susceptor and configured to measure a temperature of a surface of the susceptor heated by the heating unit provided under the susceptor,wherein the film deposition apparatus further comprises a plate member provided so as to face another surface of the susceptor opposite to the one surface with a space between the another surface and the plate member in the chamber,wherein the plate member is disposed between the heating unit and a bottom portion of the chamber, andwherein the plate member has through-holes to permit electrical feedthroughs to pass through and power the heating unit.