Method of manufacturing dual gate oxide devices,申请号US201314040737-传众专利搜索

发明名称	Method of manufacturing dual gate oxide devices
摘要	The present invention provides method of manufacturing dual gate oxide devices. The method comprises coating photoresist on the substrate which is deposited by an oxide thin film; removing some of the photoresist by exposure and development to divide the oxide thin film into a first area to be etched and a second area coated by the remained photoresist; coating RELACS material on the remained photoresist and heating to form a protective film based on the crosslinking reaction between the RELACS material and the high molecular compounds in the photoresist; performing UV radiation to strengthen and cure the protective film; removing the oxide thin film in the first area by etching and removing the remained photoresist; and depositing again an oxide firm to form an oxide layer of different thickness in the first area and the second area so as to form a dual gate oxide structure.
申请公布号	US8962494(B2)	申请公布日期	2015.02.24
申请号	US201314040737	申请日期	2013.09.30
申请人	Shanghai Huali Microelectronics Corporation	发明人	Huang Jun;Mao Zhibiao;Chong Ermin
分类号	H01L21/31;H01L21/469;H01L21/311;H01L21/027;H01L21/3213;H01L21/033;H01L21/308;H01L21/28	主分类号	H01L21/31
代理机构		代理人
主权项	1. A method of manufacturing dual gate oxide devices comprising the following steps: Step S01, coating photoresist on a substrate which is deposited by an oxide thin film; Step S02, removing some of the photoresist by exposure and development to divide the oxide thin film into a first area which is to be etched and a second area which is coated by the remained photoresist; Step S03, performing chemical curing treatment by coating Resolution Enhancement Lithography Assisted by Chemical Shrink material having water soluble polymer material on the remained photoresist and heating, so as to form a protective film based on the crosslinking reaction between the Resolution Enhancement Lithography Assisted by Chemical Shrink material and the high molecular compounds in the photoresist; Step S04, performing UV radiation to the photoresist surface treated by step S03 to strengthen and cure the protective film, wherein the decrease of the photoresist pattern linewidth caused by the UV radiation is compensated by the increase of the photoresist pattern linewidth caused by the chemical curing treatment; Step S05, removing the oxide thin film in the first area by an etching process and removing the remained photoresist; Step S06, depositing again an oxide film to form an oxide layer of different thickness in the first area and the second area so as to form a dual gate oxide structure.
地址	Shanghai CN