Method of forming hybrid diffusion barrier layer and semiconductor device thereof

摘要

In a method of fabricating a semiconductor device, an opening is formed inside a dielectric layer above a semiconductor substrate. The opening has a wall. At least one diffusion barrier material is then formed over the wall of the opening by at least two alternating steps, which are selected from the group consisting of a process of physical vapor deposition (PVD) and a process of atomic layer deposition (ALD). A liner layer is formed over the at least one diffusion barrier material.

主权项

1. A method of fabricating a semiconductor device, comprising:
forming an opening inside a dielectric layer over a substrate, the opening having a wall; forming at least one diffusion barrier material comprising a metal nitride over the wall of the opening by at least two alternating steps selected from the group consisting of a process of physical vapor deposition (PVD) and a process of atomic layer deposition (ALD), the at least one diffusion barrier layer comprises:
at least one layer comprising tantalum nitride (TaN), wherein the atomic ratio of tantalum (Ta) to nitrogen (N) is substantially 1:1, andat least a second layer comprising TaNx, wherein x is a number in the range of from 0.5 to 1.5; and forming a liner layer over the at least one diffusion barrier material.