Low temperature transition metal oxide for memory device

摘要

A metal oxide formed by in situ oxidation assisted by radiation induced photo-acid is described. The method includes depositing a photosensitive material over a metal surface of an electrode. Upon exposure to radiation (for example ultraviolet light), a component, such as a photo-acid generator, of the photosensitive material forms an oxidizing reactant, such as a photo acid, which causes oxidation of the metal at the metal surface. As a result of the oxidation, a layer of metal oxide is formed. The photosensitive material can then be removed, and subsequent elements of the component can be formed in contact with the metal oxide layer. The metal oxide can be a transition metal oxide by oxidation of a transition metal. The metal oxide layer can be applied as a memory element in a programmable resistance memory cell. The metal oxide can be an element of a programmable metallization cell.

主权项

1. A method for manufacturing a component of an integrated circuit, comprising:
forming a first active element on a substrate, the first active element including metal having a metal surface, wherein the first active element comprises a first electrode with a plug structure including a core and a liner in an interlayer insulator, wherein the core comprises the metal, and the liner comprises a diffusion barrier; depositing a photosensitive material over the metal surface; exposing the photosensitive material to radiation which induces oxidation of the metal at the metal surface to form a metal oxide layer; and forming a second active element over the metal oxide layer, wherein the second active element comprises a second electrode, whereby the component comprises a programmable resistance memory cell.