Transistor device with improved source/drain junction architecture and methods of making such a device

摘要

One illustrative device disclosed herein includes a plurality of source/drain regions positioned in an active region on opposite sides of a gate structure, each of the source/drain regions having a lateral width in a gate length direction of the transistor and a plurality of halo regions, wherein each of the halo regions is positioned under a portion, but not all, of the lateral width of one of the plurality of source/drain regions. A method disclosed herein includes forming a plurality of halo implant regions in an active region, wherein an outer edge of each of the halo implant regions is laterally spaced apart from an adjacent inner edge of an isolation region.

主权项

1. A method, comprising:
forming an isolation region in a semiconductor substrate so as to define an active region in said substrate; forming a gate structure above said active region; and after forming said gate structure, forming a plurality of halo implant regions in said active region, wherein an outer edge of each of said halo implant regions is laterally spaced apart from an adjacent inner edge of said isolation region, wherein forming said plurality of halo implant region comprises:
forming a patterned halo implantation mask that has an opening that exposes said gate structure and a portion, but not all, of said active region positioned between said gate structure and said isolation region; andperforming a plurality of angled ion implantation processes through said patterned halo implantation mask to form said plurality of halo implant regions.