Methods of forming a mask and methods of correcting intra-field variation across a mask design used in photolithographic processing

摘要

A method of forming a mask includes creating a difference map between a desired intra-field pattern that is to be formed on substrates and an intra-field signature pattern. The intra-field signature pattern represents a pattern formed on an example substrate by an exposure field using an example E-beam-written mask. Modifications are determined to formation of mask features to be made using an E-beam mask writer if forming a modified E-beam-written mask having mask features modified from that of the example E-beam-written mask that will improve substrate feature variation identified in the difference map. The E-beam mask writer is programmed using the determined modifications to improve the substrate feature variation identified in the difference map. It is used to form the modified E-beam-written mask having the modified mask features. One or more substrates are photolithographically processed using the modified E-beam-written mask.

主权项

1. A method of forming a mask, the mask comprising mask features thereon, the method comprising:
creating a difference map between a desired intra-field pattern that is to be formed on substrates and an intra-field signature pattern, the intra-field signature pattern representing a pattern formed on an example substrate by an exposure field using an example E-beam-written mask; determining modifications to formation of mask features to be made using an E-beam mask writer if forming a modified E-beam-written mask having mask features modified from that of the example E-beam-written mask that will improve substrate feature variation identified in the difference map; the modifications being change in size, shape, and/or spacing of the mask features from size, shape, and/or spacing of the mask features before said determining of the modifications; programming the E-beam mask writer using the determined modifications to improve the substrate feature variation identified in the difference map; using the programmed E-beam mask writer to form the modified E-beam-written mask having the modified mask features; the modified mask features having the changed size, shape, and/or spacing on the modified E-beam-written mask; and photolithographically processing one or more substrates using the modified E-beam-written mask.