发明名称 Templates having high contrast alignment marks
摘要 Described are systems and methods for formation of templates having alignment marks with high contrast material. High contrast material may be positioned within recesses of alignment marks.
申请公布号 US8961852(B2) 申请公布日期 2015.02.24
申请号 US201113021461 申请日期 2011.02.04
申请人 Canon Nanotechnologies, Inc. 发明人 Selinidis Kosta S.
分类号 G03F7/00;B82Y10/00;B82Y40/00 主分类号 G03F7/00
代理机构 代理人 King Cameron A.
主权项 1. A method of patterning an imprint nano-lithography substrate, comprising the steps of: (a) forming a plurality of protrusions and recessions onto an alignment area and a feature area of the substrate; (b) depositing high contrast material on the alignment area; (c) forming a layer on the alignment and feature areas; (d) removing a portion of the formed layer from the alignment area, such that the remaining portion of the formed layer remains only in the recessions of the alignment area; (e) removing a portion of the high contrast material from the alignment area, such that the remaining portion of the high contrast material remains only in the recessions of the alignment area; and (g) removing the remaining portion of the of the formed layer in the recessions of the alignment area to expose the high contrast material remaining in the recessions of the alignment area.
地址 Austin TX US