| 发明名称 | Semiconductor pointed structure and method for fabricating same, spot size converter, and non-reflective terminator | ||
| 摘要 | A semiconductor pointed structure formed at an end portion of the core structure of a semiconductor photonic wire waveguide has a sloped side wall on at least one of the sides that constitute the pointed structure. The semiconductor pointed structure decreases in width and thickness towards the distal end. A method for fabrication of the structure is also disclosed. | ||
| 申请公布号 | US8965157(B2) | 申请公布日期 | 2015.02.24 |
| 申请号 | US201313800770 | 申请日期 | 2013.03.13 |
| 申请人 | National Institute of Advanced Industrial Science and Technology | 发明人 | Sakakibara Youichi;Takei Ryohei;Mori Masahiko;Kamei Toshihiro |
| 分类号 | G02B6/26;G02B6/136;G02B6/122;G02B6/30;G02B6/24 | 主分类号 | G02B6/26 |
| 代理机构 | Hayes Soloway P.C. | 代理人 | Hayes Soloway P.C. |
| 主权项 | 1. A silicon pointed structure formed at an end portion of a core structure of a silicon photonic wire waveguide, and having a sloped side wall on at least one of the sides constituting a pointed structure, wherein the silicon pointed structure has a width and thickness decreasing towards a distal end thereof, and wherein the shape of the cross section in proximity to the distal end is triangular. | ||
| 地址 | JP | ||