发明名称 Defect analyzing method and defect analyzing apparatus
摘要 A defect analyzing method includes acquiring a position and a size of a defect obtained in a defect inspection of a semiconductor device and a waveform of a reflected light in a region which includes the defect, the waveform being obtained in an optical inspection; acquiring process step information which includes a plurality of process steps to manufacture the semiconductor device and a processing content per the process step; performing a process simulation of the semiconductor device based on the position and the size of the defect and the process step information; performing an optical simulation on a result of the process simulation thereby to generate a waveform of a reflected light; calculating a similarity degree between the acquired waveform of the reflected light and the generated waveform of the reflected light; and judging whether or not the calculated similarity degree exceeds a threshold value registered in advance.
申请公布号 US8965551(B2) 申请公布日期 2015.02.24
申请号 US201113050191 申请日期 2011.03.17
申请人 Kabushiki Kaisha Toshiba 发明人 Shioyama Yoshiyuki
分类号 G06F19/00;H01L21/66;G01N21/95 主分类号 G06F19/00
代理机构 Finnegan, Henderson, Farabow, Garret & Dunner, L.L.P. 代理人 Finnegan, Henderson, Farabow, Garret & Dunner, L.L.P.
主权项 1. A defect analyzing method of analyzing a defect of a semiconductor device manufactured by a plurality of process steps, based on an inspection result obtained by an inspection process, comprising: acquiring defect information having a position and a size of the defect and a waveform of a reflected light in a region including the defect, from the inspection result; acquiring process step information including the process steps and processing contents thereof; performing a plurality of process simulations of the semiconductor device based on the defect information with respect to each of the process steps; performing a plurality of optical simulations on results of the process simulations to generate a plurality of simulated waveforms for each of the process steps; calculating a similarity degree between the acquired waveform of the reflected light and the simulated waveform for each of the process steps; and judging whether or not the calculated similarity degree exceeds a threshold value registered in advance to find out a causal process among the process steps.
地址 Tokyo JP