发明名称 |
Defect analyzing method and defect analyzing apparatus |
摘要 |
A defect analyzing method includes acquiring a position and a size of a defect obtained in a defect inspection of a semiconductor device and a waveform of a reflected light in a region which includes the defect, the waveform being obtained in an optical inspection; acquiring process step information which includes a plurality of process steps to manufacture the semiconductor device and a processing content per the process step; performing a process simulation of the semiconductor device based on the position and the size of the defect and the process step information; performing an optical simulation on a result of the process simulation thereby to generate a waveform of a reflected light; calculating a similarity degree between the acquired waveform of the reflected light and the generated waveform of the reflected light; and judging whether or not the calculated similarity degree exceeds a threshold value registered in advance. |
申请公布号 |
US8965551(B2) |
申请公布日期 |
2015.02.24 |
申请号 |
US201113050191 |
申请日期 |
2011.03.17 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Shioyama Yoshiyuki |
分类号 |
G06F19/00;H01L21/66;G01N21/95 |
主分类号 |
G06F19/00 |
代理机构 |
Finnegan, Henderson, Farabow, Garret & Dunner, L.L.P. |
代理人 |
Finnegan, Henderson, Farabow, Garret & Dunner, L.L.P. |
主权项 |
1. A defect analyzing method of analyzing a defect of a semiconductor device manufactured by a plurality of process steps, based on an inspection result obtained by an inspection process, comprising:
acquiring defect information having a position and a size of the defect and a waveform of a reflected light in a region including the defect, from the inspection result; acquiring process step information including the process steps and processing contents thereof; performing a plurality of process simulations of the semiconductor device based on the defect information with respect to each of the process steps; performing a plurality of optical simulations on results of the process simulations to generate a plurality of simulated waveforms for each of the process steps; calculating a similarity degree between the acquired waveform of the reflected light and the simulated waveform for each of the process steps; and judging whether or not the calculated similarity degree exceeds a threshold value registered in advance to find out a causal process among the process steps. |
地址 |
Tokyo JP |