| 发明名称 | Mask blank, reflective mask blank, photomask, reflective mask, photomask set and method of manufacturing a semiconductor device | ||
| 摘要 | In a mask blank substrate having two main surfaces and four end faces, a central point is set on the main surface, a first axis of symmetry that passes through the central point and that is parallel to one of the end faces and a second axis of symmetry that passes through the central point and that is perpendicular to the first axis are respectively set, measurement points are set in the form of a grid with respect to the first and the second axes so as to measure heights of the main surface from a reference plane at the measurement points, respectively, differences each between measured height values at those measurement points located at positions axisymmetric with respect to the first axis are calculated. Those differences corresponding to at least 95% of the total number of the calculated differences between the measured height values are within a predetermined value. | ||
| 申请公布号 | US8962223(B2) | 申请公布日期 | 2015.02.24 |
| 申请号 | US201313752694 | 申请日期 | 2013.01.29 |
| 申请人 | Hoya Corporation | 发明人 | Sasaki Tatsuya;Miyazaki Takahiro |
| 分类号 | G03F1/50;G03F7/00;B24B1/00;B24B37/04;C03C19/00;G03F1/00;G03F1/60;G03F7/20 | 主分类号 | G03F1/50 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC |
| 主权项 | 1. A mask blank comprising: a substrate having two main surfaces and four end faces; a thin film for transfer pattern formation formed on the main surface of the substrate, wherein a first axis of symmetry that passes through a central point set on a surface of the thin film and that is parallel to one of the end faces and a second axis of symmetry that passes through the central point and that is perpendicular to the first axis of symmetry are respectively set, and measurement points are set in the form of a grid with respect to the first axis of symmetry and the second axis of symmetry so as to measure heights of the surface of the thin film from a reference plane at the measurement points, respectively, and wherein differences each between measured height values at those measurement points located at positions that are axisymmetric with respect to the first axis of symmetry are calculated, and those differences corresponding to at least 95% of the total number of the calculated differences between the measured height values are within a predetermined value. | ||
| 地址 | Tokyo JP | ||