| 摘要 |
<p>The present invention provides an image sensor for improving electrical properties which includes an oxide semiconductor layer which is formed on a gate electrode, an oxide layer which is formed on the surface of a channel region of the oxide semiconductor layer, a source electrode and a drain electrode which are separately arranged on the oxide semiconductor layer by interposing the channel region, an etch stop layer which is formed on the source electrode and the drain electrode to cover the oxide layer, and a photodiode which is connected to the drain electrode.</p> |
