| 发明名称 | Compound semiconductor device and method of manufacturing the same | ||
| 摘要 | A compound semiconductor device includes: a substrate; an electron transit layer formed over the substrate; an electron supply layer formed over the electron transit layer; and a buffer layer formed between the substrate and the electron transit layer and including AlxGa1-xN(0≦x≦1), wherein the x value represents a plurality of maximums and a plurality of minimums in the direction of the thickness of the buffer layer, and the variation of x in any area having a 1 nm thickness in the buffer layer is 0.5 or less. | ||
| 申请公布号 | US8963164(B2) | 申请公布日期 | 2015.02.24 |
| 申请号 | US201113301331 | 申请日期 | 2011.11.21 |
| 申请人 | Fujitsu Limited | 发明人 | Shimizu Sanae;Imanishi Kenji;Yamada Atsushi;Miyajima Toyoo |
| 分类号 | H01L29/16;H01L29/778;H01L21/02;H01L29/66;H01L29/20 | 主分类号 | H01L29/16 |
| 代理机构 | Fujitsu Patent Center | 代理人 | Fujitsu Patent Center |
| 主权项 | 1. A compound semiconductor device comprising: a substrate; an electron transit layer formed over the substrate; an electron supply layer formed over the electron transit layer; and a buffer layer formed between the substrate and the electron transit layer and including AlxGa1-xN(0≦x≦1), wherein the x value represents a plurality of maximums and a plurality of minimums in the direction of the thickness of the buffer layer, and the variation of x in any area having a 1 nm thickness in the buffer layer is 0.01 to 0.5. | ||
| 地址 | Kawasaki JP | ||