发明名称 Method for fabricating a carrier with a three dimensional inductor and structure thereof
摘要 A method for fabricating a carrier with a three-dimensional inductor comprises the steps of providing a substrate having a protective layer; forming a first photoresist layer on the protective layer; patterning the first photoresist layer to form a second opening and a plurality of disposing slots; forming a first metal layer in second opening and disposing slots; removing the first photoresist layer; forming a first dielectric layer on the protective layer; forming a second photoresist layer on the first dielectric layer; patterning the second photoresist layer to form a plurality of slots; forming a second metal layer in slots to form a plurality of inductive portions; removing the second photoresist layer; forming a second dielectric layer on the first dielectric layer; forming a third photoresist layer on the second dielectric layer; patterning the third photoresist layer to form a plurality of slots; and forming a third metal layer in slots.
申请公布号 US8963675(B2) 申请公布日期 2015.02.24
申请号 US201213644964 申请日期 2012.10.04
申请人 Chipbond Technology Corporation 发明人 Kuo Chih-Ming;Hsu You-Ming
分类号 H01F5/00;H01F27/28;H05K1/16;H05K3/46 主分类号 H01F5/00
代理机构 Jackson IPG PLLC 代理人 Jackson IPG PLLC
主权项 1. A carrier with a three dimensional inductor comprises: a substrate having a surface, at least one first bond pad and a protective layer, wherein the first bond pad is disposed on the surface, the protective layer is formed on the surface and comprises at least one first opening, and the first bond pad is exposed by the first opening; a first metal layer formed on the protective layer, the first metal layer comprises a first connecting pad and a plurality of first inductive portions, wherein each of the first inductive portions comprises a first connecting terminal, a second connecting terminal and a first height; a first dielectric layer formed on the protective layer and covered the first metal layer, the first dielectric layer comprises a third opening, a plurality of fourth openings and a plurality of fifth openings, wherein the first connecting pad is exposed by the third openings, each of the first connecting terminals is exposed by the fourth openings, and each of the second connecting terminals is exposed by the fifth openings; a second metal layer formed on the first dielectric layer, the second metal layer comprises a second inductive portion, a plurality of third inductive portions and a plurality of fourth inductive portions, wherein the second inductive portion is in connection with the first connecting pad and comprises a first top surface and a second height, each of the third inductive portions is in connection with each of the first connecting terminals and comprises a second top surface and a third height, each of the fourth inductive portions is in connection with each of the second connecting terminals and comprises a third top surface and a fourth height, wherein the dimension of the first height is smaller than that of the second height, the third height and the fourth height; a second dielectric layer formed on the first dielectric layer and covered the second metal layer, the second dielectric layer comprises a first exposing slot, a plurality of second exposing slots and a plurality of third exposing slots, wherein the first top surface is exposed by the first exposing slot, each of the second top surfaces is exposed by each of the second exposing slots, and each of the third top surfaces is exposed by each of the third exposing slots; and a third metal layer formed on the second dielectric layer, the third metal layer comprises a fifth inductive portion and a plurality of sixth inductive portions, wherein the fifth inductive portion is in connection with the second inductive portion and the third inductive portion, each of the sixth inductive portions is in connection with the third inductive portion and the fourth inductive portion, the fifth inductive portion comprises a fifth height, each of the sixth inductive portions comprises a sixth height, wherein the dimension of the fifth height and the sixth height are respectively smaller than that of the second height, the third height and the fourth height.
地址 Hsinchu TW