发明名称 Semiconductor switch
摘要 The present invention discloses a semiconductor switch comprising a switching unit. Said switching unit includes: a transistor having a drain, a gate and a source; a drain bias resistor coupled to the drain; a drain bias selecting circuit to couple the drain bias resistor with a first or a second drain bias according to the transistor's state; a gate bias resistor coupled to the gate; a gate bias selecting circuit to couple the gate bias resistor with a first or a second gate bias according to the transistor's state; a source bias resistor coupled to the source; and a source bias selecting circuit to couple the source bias resistor with a first or a second source bias according to the transistor's state, wherein the first and second drain biases are different, the first and second gate biases are different, and the first and second source biases are different.
申请公布号 US8963619(B2) 申请公布日期 2015.02.24
申请号 US201414297087 申请日期 2014.06.05
申请人 Realtek Semiconductor Corporation 发明人 Wang Po-Chih
分类号 H03K17/687;H03K17/081 主分类号 H03K17/687
代理机构 WPAT, P.C. 代理人 WPAT, P.C. ;King Anthony
主权项 1. A semiconductor switch applicable to an electronic device, comprising a switching unit which comprises: a transistor having a drain, a gate and a source; a drain bias resistor coupled to the drain; a drain bias selecting circuit to couple the drain bias resistor with a node of a first drain bias voltage when the transistor is turned on, and couple the drain bias resistor with a node of a second drain bias voltage when the transistor is turned off, in which the voltage values at the nodes of the first and second drain bias voltages are independent of the coupling actions of the drain bias selecting circuit; a gate bias resistor coupled to the gate; a gate bias selecting circuit to couple the gate bias resistor with a node of a first gate bias voltage when the transistor is turned on, and couple the gate bias resistor with a node of a second gate bias voltage when the transistor is turned off, in which the voltage values at the nodes of the first and second gate bias voltages are independent of the coupling actions of the gate bias selecting circuit; a source bias resistor coupled to the source; and a source bias selecting circuit to couple the source bias resistor with a node of a first source bias voltage when the transistor is turned on, and couple the source bias resistor with a node of a second source bias voltage when the transistor is turned off, in which the voltage values at the nodes of the first and second source bias voltages are independent of the coupling actions of the source bias selecting circuit, wherein the first and second drain bias voltages are different, the first and second gate bias voltages are different, and the first and second source bias voltages are different.
地址 Hsinchu TW