Method of forming pattern for semiconductor device

摘要

The present disclosure provides a method including providing a semiconductor substrate and forming a first layer and a second layer on the semiconductor substrate. The first layer is patterned to provide a first element, a second element, and a space interposing the first and second elements. Spacer elements are then formed on the sidewalls on the first and second elements of the first layer. Subsequently, the second layer is etched using the spacer elements and the first and second elements as a masking element.

主权项

1. A method, comprising:
providing a semiconductor substrate; forming a first layer and a second layer on the semiconductor substrate; patterning the first layer, wherein patterning includes:
forming a first patterned photoresist layer on the first layer;etching the first layer using the first patterned photoresist layer to provide a first element, a second element, and a space interposing the first and second elements;forming a second patterned photoresist layer directly on the first element, second element, and the space interposing the first and second elements;using the second patterned photoresist layer to etch the first and second elements such that the first and second elements each have a decreased width; after patterning the first layer, forming spacer elements on sidewalls on the first and second elements of the first layer having the decreased widths; etching the second layer using the spacer elements and the first and second elements having the decreased widths as a masking element; removing the patterned first layer and the spacer elements from the semiconductor substrate; and after removing the patterned first layer and spacer elements, using the etched second layer as a masking element in a subsequent etching process.