Semiconductor device with dual work function gate stacks and method for fabricating the same

摘要

A method for fabricating a semiconductor device includes forming a gate dielectric layer over a substrate; forming a metal containing layer, containing an effective work function adjust species, over the gate dielectric layer; forming an anti-reaction layer over the metal containing layer; increasing an amount of the effective work function adjust species contained in the metal containing layer; and forming, on the substrate, a gate stack by etching the anti-reaction layer, the metal containing layer, and the gate dielectric layer.

主权项

1. A method for fabricating a semiconductor device, the method comprising:
forming a gate dielectric layer over a substrate; forming a metal containing layer, containing an effective work function adjust species, over the gate dielectric layer; forming an anti-reaction layer over the metal containing layer; increasing an amount of the effective work function adjust species contained in the metal containing layer by annealing the metal containing layer in an atmosphere containing the effective work function adjust species; and forming, on the substrate, a gate stack by etching the anti-reaction layer, the metal containing layer, and the gate dielectric layer after the annealing of the metal containing layer.