发明名称 Bonded strained semiconductor with a desired surface orientation and conductance direction
摘要 According to various method embodiments, a semiconductor layer is oriented to a substrate. The semiconductor layer has a surface orientation and is oriented to the substrate to provide a desired direction of conductance for the surface orientation. The oriented semiconductor layer is bonded to the substrate to strain the semiconductor layer. Various embodiments provide a tensile strain, and various embodiments provide a compressive strain. Other aspects and embodiments are provided herein.
申请公布号 US8962447(B2) 申请公布日期 2015.02.24
申请号 US200611498586 申请日期 2006.08.03
申请人 Micron Technology, Inc. 发明人 Forbes Leonard
分类号 H01L21/30;H01L21/46;H01L21/8238;H01L29/10;H01L29/66;H01L29/78 主分类号 H01L21/30
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. A method, comprising: orienting a semiconductor layer to a substrate, the substrate having a direction of conduction for an integrated circuit to be fabricated using the substrate; and bonding the oriented semiconductor layer to the substrate, wherein bonding the oriented semiconductor layer to the substrate strains the oriented semiconductor layer, wherein: the semiconductor layer has a surface orientation, before the semiconductor layer is bonded to the substrate, for which a desired direction of conduction is more conductive than other directions; andorienting the semiconductor layer to the substrate includes: identifying the desired direction of conduction for the semiconductor layer before bonding the semiconductor layer to the substrate; andaligning the desired direction of conduction for the semiconductor layer with the direction of conduction of the substrate to orient the semiconductor layer to the substrate before bonding the oriented semiconductor layer to the substrate, andbonding the oriented semiconductor layer to the substrate strains the oriented semiconductor layer in a desired direction of strain to promote carrier mobility in the desired direction of conduction.
地址 Boise ID US