| 发明名称 |
Lateral bipolar transistors having partially-depleted intrinsic base |
| 摘要 |
A bipolar junction transistor (BJT) and method for fabricating such. The transistor includes an emitter region, a collector region, and an intrinsic-base region. The intrinsic-base region is positioned between the emitter region and the collector region. Furthermore, the physical separation between the emitter region and the collector region is less than the sum of a base-emitter space-charge region width and a base-collector space-charge region width at the transistor's standby mode. |
| 申请公布号 |
US8962436(B2) |
申请公布日期 |
2015.02.24 |
| 申请号 |
US201313931843 |
申请日期 |
2013.06.29 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Cai Jin;Ning Tak H.;Shahidi Ghavam G.;Yau Jeng-Bang |
| 分类号 |
H01L29/08;H01L29/10;H01L29/735;H01L21/331;H01L29/66;H01L21/22;H01L21/762 |
主分类号 |
H01L29/08 |
| 代理机构 |
|
代理人 |
Tuchman Ido;Percello Louis J. |
| 主权项 |
1. A method for fabricating a bipolar junction transistor (BJT), the method comprising:
doping an intrinsic-base region positioned between an emitter region and a collector region; and doping the emitter region and the collector region, wherein a physical separation between the emitter region and the collector region is less than the sum of a base-emitter space-charge region width and a base-collector space-charge region width at a transistor standby mode. |
| 地址 |
Armonk NY US |
