Methods of forming gates of semiconductor devices

摘要

Methods of forming gates of semiconductor devices are provided. The methods may include forming a first recess in a first substrate region having a first conductivity type and forming a second recess in a second substrate region having a second conductivity type. The methods may also include forming a high-k layer in the first and second recesses. The methods may further include providing a first metal on the high-k layer in the first and second substrate regions, the first metal being provided within the second recess. The methods may additionally include removing at least portions of the first metal from the second recess while protecting materials within the first recess from removal. The methods may also include, after removing at least portions of the first metal from the second recess, providing a second metal within the second recess.

主权项

1. A method of forming a gate of a semiconductor device, the method comprising:
forming first and second dummy gate electrodes on first and second regions of a substrate, respectively; forming gate spacers on opposing sidewalls of each of the first and second dummy gate electrodes; forming an interlayer dielectric film on the gate spacers and on the first and second dummy gate electrodes to provide an n-type transistor in the first region and a p-type transistor in the second region; forming first and second recesses in the first and second regions, respectively, by removing the first and second dummy gate electrodes; forming a high-k layer by providing a high dielectric constant material in the first and second recesses and on the interlayer dielectric film; providing a first metal on the high-k layer, the first metal substantially filling the first and second recesses, wherein a top surface of the first metal is located higher than a top surface of the interlayer dielectric film; selectively removing the first metal from the second recess while at least a portion of the first metal remains in the first recess; after selectively removing the first metal from the second recess, providing a second metal within the second recess; and providing a third metal on the second metal, the third metal substantially filling the second recess.