发明名称 Photon extraction from nitride ultraviolet light-emitting devices
摘要 In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.
申请公布号 US8962359(B2) 申请公布日期 2015.02.24
申请号 US201213553093 申请日期 2012.07.19
申请人 Crystal IS, Inc. 发明人 Schowalter Leo J.;Chen Jianfeng;Grandusky James R.
分类号 H01L21/00;H01L33/54;H01L33/58;H01L33/22;H01L33/40 主分类号 H01L21/00
代理机构 Morgan, Lewis & Bockius LLP 代理人 Morgan, Lewis & Bockius LLP
主权项 1. A method of forming an illumination device, the method comprising: providing a layer of non-rigid encapsulant between a surface of an ultraviolet (UV) light-emitting semiconductor die and a surface of a rigid lens opposing the surface of the semiconductor die; and with the encapsulant, attaching the rigid lens to the semiconductor die via application of a force sufficient to minimize a thickness of the encapsulant between the rigid lens and the semiconductor die, wherein, after attachment of the rigid lens, the thickness of the encapsulant is insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.
地址 Green Island NY US