Composition for advanced node front-and back-end of line chemical mechanical polishing

摘要

The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.

主权项

1. A slurry for polishing a substrate for semiconductor integrated circuit devices at the front end of the line during the fabrication process, the slurry comprising:
a) 0.2 wt % to 30 wt %, based on the total weight of the slurry, of an abrasive selected from the group consisting of alumina, silica, titania, ceria, zirconia, co-formed products thereof, and mixtures thereof; b) 0.00033 wt % to 20 wt %, based on the total weight of the slurry, of an acid comprising hydrochloric acid, nitric acid, sulfuric acid, phosphonic acid, phosphoric acid, organo-phosphoric acid, and mixtures thereof; c) 0.000033 wt % to 5 wt %, based on the total weight of the slurry, of a stabilizer selected from the group consisting of C1-C12 alkanols and derivatives thereof, ethanolamine, methylaminoethanol, dimethylaminoethanol, isopropanolamine, tetramethylammonium hydroxide, tetrabutylammonium hydroxide, and any mixtures thereof; and d) water, wherein the pH of the slurry is between 2.2 and 3.5, and wherein said slurry exhibits a removal rate selectivity ratio of from 1:1 to 2:1 for oxide to polysilicon, and wherein said slurry exhibits a removal rate selectivity ratio of from 1:1 to 2:1 for oxide to nitride.