发明名称 Method and device for cleaning semiconductor substrate
摘要 According to one embodiment, a method for cleaning a semiconductor substrate comprises supplying water vapor to a surface of a semiconductor substrate on which a concave-convex pattern is formed while heating the semiconductor substrate at a predetermined temperature, cooling the semiconductor substrate after stopping the heating and the supply of the water vapor and freezing water on the semiconductor substrate, after freezing the water, supplying pure water onto the semiconductor substrate and melting a frozen film, and after melting the frozen film, drying the semiconductor substrate.
申请公布号 US8961696(B2) 申请公布日期 2015.02.24
申请号 US201213423583 申请日期 2012.03.19
申请人 Kabushiki Kaisha Toshiba 发明人 Tomita Hiroshi;Inukai Minako;Okuchi Hiaashi;Ji Linan
分类号 B08B7/00;H01L21/67;H01L21/02 主分类号 B08B7/00
代理机构 Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P. 代理人 Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
主权项 1. A method for cleaning a semiconductor substrate, comprising: supplying water vapor to a surface of a semiconductor substrate on which a concave-convex pattern is formed while heating the semiconductor substrate at a predetermined temperature, to form an adsorbed water layer; stopping the heating and the supply of the water vapor so that the surface of the adsorbed water layer has a concave and convex pattern matching the concave-convex pattern formed on the surface of the semiconductor substrate, and subsequently cooling the semiconductor substrate to freeze water on the semiconductor substrate; after freezing the water, supplying pure water onto the semiconductor substrate and melting a frozen film; and after melting the frozen film, drying the semiconductor substrate.
地址 Tokyo JP