| 摘要 |
<p>The present invention relates to a flip chip type nitride semiconductor light emitting device. The disclosed relates to the flip chip type nitride semiconductor light emitting device having an electrode structure having improved current diffusion properties. According to an embodiment of the present invention, the flip chip type nitride semiconductor light emitting device includes: a first semiconductor layer having first conductivity; a second semiconductor layer having second conductivity different from the first conductivity; an active layer which is disposed between the first and the second semiconductor layers and generates a photon by recombining electron with a hole; first and second electrode areas which are formed on the second semiconductor layer, formed to be insulated electrically with each other, and connected electrically to the first and the second semiconductor layer, respectively; a plurality of via holes which is formed to reach the first semiconductor by penetrating the second semiconductor layer and the active layer, connects electrically the first electrode area and the first semiconductor layer, and includes at least one first via hole which is located within the first electrode and at least one second via hole which is located outside the first electrode area.</p> |
