发明名称 Lifetime testing method of thermistor device
摘要 <p>The present invention relates to a method for testing accelerated aging of a thermistor element including dummy wires, electrodes which are electrically connected to the dummy wires, a thermistor chip which is located between the two electrodes and a protection film to surround the electrodes and the thermistor chip. The method of the present invention includes: the step of performing an accelerated aging test while supplying 5V to the thermistor element at a room temperature, wherein the accelerated aging test time (t) is defined by t >= (lnß/nxln(0.9))^l/mxB_10x(H_a/H_0)^-1.99xe^[1.851Kx(1/T_a-1/T_0)] (wherein 1-β: reliable level, n: number of test samples, m: shape population parameter, H_o: humidity in use conditions, H_a: humidity in accelerated conditions, T_o: absolute temperature in use condition, T_a: absolute temperature in accelerated conditions, B_10: target aging). According to the present invention, the method is capable of: remarkably reducing the test time through the accelerated aging test considering a failure mechanism of the thermistor element; improving reliability for the aging of the thermistor element by suggesting reliability evaluation conditions to verify the reliability of the thermistor element; and predicting a replacement cycle and a yield by accurately predicting the aging of the thermistor element through the aging evaluation.</p>
申请公布号 KR101494634(B1) 申请公布日期 2015.02.23
申请号 KR20140111187 申请日期 2014.08.26
申请人 发明人
分类号 G01R31/12 主分类号 G01R31/12
代理机构 代理人
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