发明名称 Semiconductor Memory Apparatus
摘要 <p>The present invention includes a first junction region which is formed on an active region, a gate region which is formed on the active region to surround the first junction region, a second junction region which is formed on the active region via the gate region in one direction of the first junction region, and a third junction region which is formed on the active region via the gate region in the other direction of the first junction region. The second junction region and the third junction region are arranged to locate the gate region between the second junction region and the third junction region.</p>
申请公布号 KR20150018095(A) 申请公布日期 2015.02.23
申请号 KR20130094571 申请日期 2013.08.09
申请人 发明人
分类号 H01L21/77;H01L27/00 主分类号 H01L21/77
代理机构 代理人
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