| 摘要 |
<p>A semiconductor memory device is provided. The semiconductor memory device includes: an M x N number of fuses arranged in an array form to program an N number of repair column address information consisting of an M number of bits, respectively; a fuse selecting unit configured to select the M x N number of fuses in M number of units in response to an active command and row address information applied from the outside, and to output repair column address information stored in the selected M number of fuses; and a repair determining unit configured to determine whether to repair column address information applied from the outside based on repair column address information selected by the fuse selecting unit. Accordingly, time required for a repair operation in a memory integrated circuit may be reduced, and an area occupied by a repair circuit may be minimized.</p> |
