摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor film having excellent productivity and capable of suppressing occurrence of oxygen deficiency and stabilizing element characteristics at light irradiation.SOLUTION: A semiconductor film comprises an oxide semiconductor layer and an oxide layer. The oxide layer is arranged in the oxide semiconductor layer, and can supply oxygen to the oxide semiconductor layer. The oxide semiconductor layer, for example, contains In, Ga, and Zn. The oxide layer, for example, contains at least one selected from Ga, Al, Y, Ti, Ce, Cr, Hf, and Nb.</p> |