发明名称 SEMICONDUCTOR FILM, THIN-FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor film having excellent productivity and capable of suppressing occurrence of oxygen deficiency and stabilizing element characteristics at light irradiation.SOLUTION: A semiconductor film comprises an oxide semiconductor layer and an oxide layer. The oxide layer is arranged in the oxide semiconductor layer, and can supply oxygen to the oxide semiconductor layer. The oxide semiconductor layer, for example, contains In, Ga, and Zn. The oxide layer, for example, contains at least one selected from Ga, Al, Y, Ti, Ce, Cr, Hf, and Nb.</p>
申请公布号 JP2015037164(A) 申请公布日期 2015.02.23
申请号 JP20130169063 申请日期 2013.08.16
申请人 TOKYO INSTITUTE OF TECHNOLOGY;ASAHI GLASS CO LTD 发明人 HOSONO HIDEO;ABE KATSUMI;YAMADA KAZUO;TAKEDA SATOSHI
分类号 H01L29/786;H01L21/316;H01L21/336 主分类号 H01L29/786
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