| 摘要 |
Provided are: a drive circuit which uses a thin film transistor and a resistive element manufactured by using an oxide semiconductor layer where electrical characteristics are controlled; and a semiconductor device using the drive circuit. An oxide semiconductor layer (905) applied to a resistive element (354) is formed to be in a direct contact with a nitride silicon layer (910) which is formed by a plasma CVD method using gas including a hydrogen compound such as silane (SiH_4) and ammonia (NH_3). On an oxide semiconductor layer (906) applied to a thin film transistor (355), the nitride silicon layer (910) is formed between the oxide semiconductor layer and an oxide silicon layer (909) which functions as a barrier layer. Hydrogen comes to the oxide semiconductor layer (905) at a concentration which is higher than the oxide semiconductor layer (906). Thereby a resistance of the oxide semiconductor layer (905) applied to the resistive element (354) is lower than a resistance of the oxide semiconductor layer (906) applied to the thin film transistor (355). |
