发明名称 TRIGGER FOR COMPLEMENTARY MICROCIRCUIT OF METAL-OXIDE-SEMICONDUCTOR STRUCTURE
摘要 FIELD: electricity.SUBSTANCE: trigger consists of pairs of interconnected NMOS and PMOS transistors with power supply bus, control and output lines; the transistors are jointed in two blocks, each of them containing two groups of two NMOS and two PMOS transistors, at that two blocks of transistors are placed at integrated circuit crystal at distance from each other, which is equal to threshold value or bigger than this value in order to exclude simultaneous impact of single nuclear particle on both blocks of transistors at the level more than the threshold value.EFFECT: improving stability to impact of single nuclear particles without excess increase in square area occupied by the trigger at crystal included into composition of integral CMOS microcircuit.1 tbl, 2 dwg
申请公布号 RU2541894(C1) 申请公布日期 2015.02.20
申请号 RU20130143515 申请日期 2013.09.26
申请人 FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE UCHREZHDENIE NAUKI ROSSIJSKOJ AKADEMII NAUK NAUCHNO-ISSLEDOVATEL'SKIJ INSTITUT SISTEMNYKH ISSLEDOVANIJ RAN (NIISI RAN) 发明人 STENIN VLADIMIR JAKOVLEVICH;KATUNIN JURIJ VJACHESLAVOVICH
分类号 H03K19/007;H03K3/286;H03K19/017 主分类号 H03K19/007
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