发明名称 |
METHOD FOR FORMING TRANSISTOR EMITTER ZONE |
摘要 |
FIELD: electricity.SUBSTANCE: diffusion method of phosphorus out of solid planar source includes formation of diffusion silicon patterns with use of solid planar source of phosphorus. The process is carried out at temperature of 900°C at the stage of predeposition diffusion with the following ratio of components: O=40±0.5 l/h; N=750 l/h; H=8 l/h and time equal to 40 minutes, at the stage of up-diffusion the process is carried out at temperature of 1000°C with the following gas consumption: O=40±0.5 l/h; N=750 l/h and time of up-diffusion equal to 75 hours.EFFECT: reduced temperature and time of the process, accurate regulation of diffusion layer depth, larger depth and improved output percentage of ready products. |
申请公布号 |
RU2542591(C1) |
申请公布日期 |
2015.02.20 |
申请号 |
RU20130137974 |
申请日期 |
2013.08.13 |
申请人 |
FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "DAGESTANSKIJ GOSUDARSTVENNYJ TEKHNICHESKIJ UNIVERSITET" (DGTU) |
发明人 |
ISMAILOV TAGIR ABDURASHIDOVICH;SHAKHMAEVA AJSHAT RASULOVNA;ZAKHAROVA PATIMAT RASULOVNA |
分类号 |
H01L21/225 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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