发明名称 SOURCE OF REFERENCE VOLTAGE DETERMINED THROUGH ENERGY GAP DOUBLED WIDTH
摘要 FIELD: electricity.SUBSTANCE: device contains five transistors, three resistors and a current source which is coupled between the power supply bus and output terminal; the first resistor is coupled by its first output to the common bus, the second and third resistors are connected by their first outputs to the output terminal; bases of the first and the second transistors are connected to collectors of the first and fifth transistors and bases of the fourth and fifth transistors; the second output of the first resistor is coupled to emitter of the second transistor; emitters of the first and third transistors are connected to the common bus; collector of the third transistor is connected to the output terminal; the base of the third transistor is connected to collectors of the second and fourth transistor; emitter of the fourth transistor is connected to the second output of the second resistor; emitter of the fifth transistor is connected to the second output of the first resistor.EFFECT: receipt of thermally stable output voltage, which value is close to doubled energy gap width of the used semiconductor.3 dwg
申请公布号 RU2541915(C1) 申请公布日期 2015.02.20
申请号 RU20140110455 申请日期 2014.03.18
申请人 FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "DONSKOJ GOSUDARSTVENNYJ TEKHNICHESKIJ UNIVERSITET" (DGTU) 发明人 STARCHENKO EVGENIJ IVANOVICH;BARILOV IVAN VASIL'EVICH;GAVLITSKIJ ALEKSANDR IVANOVICH;KLIMENKO MAKSIM VLADIMIROVICH;CHERNYSHOV DMITRIJ JUR'EVICH
分类号 G05F1/56 主分类号 G05F1/56
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