发明名称 THERMAL TREATMENT DEVICE AND FILM FORMATION SYSTEM
摘要 <p>PROBLEM TO BE SOLVED: To properly perform thermal treatment of a substrate where multiple circuits are formed on a surface while simplifying the structure of a thermal treatment device.SOLUTION: A second thermal treatment device 34 includes: a processing container 230 which houses multiple wafers W; multiple heating plates 240 which are provided at multiple tiers in the processing container 230 and hold the respective wafers W to perform thermal treatment to the wafers W; a gas supply mechanism 231 which supplies an inactive gas to the processing container 230; and a wafer transfer mechanism 221 which transfers the wafers W to the multiple heating plates 240. The gas supply mechanism 231 includes a heater 235 which heats the inactive gas to be supplied to the processing container 230.</p>
申请公布号 JP2015035584(A) 申请公布日期 2015.02.19
申请号 JP20140106085 申请日期 2014.05.22
申请人 TOKYO ELECTRON LTD 发明人 HIRAKAWA OSAMU;HARA SHOGO;TERADA SHOJI
分类号 H01L21/31;H01L21/677 主分类号 H01L21/31
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