METHODS OF FORMING SEMICONDUCTOR DEVICES, INCLUDING FORMING PATTERNS BY PERFORMING AN OXIDATION PROCESS

摘要

Methods of forming semiconductor devices are provided. A method of forming a semiconductor device may include forming a structure including insulating layers and gate layers that are alternately and repeatedly stacked on a substrate. The method may include forming through-holes in the structure. The method may include forming first patterns on sidewalls of the gate layers, by performing an oxidation process. The method may include forming second patterns on portions of the substrate, by performing the oxidation process. The method may include removing the second patterns. Moreover, the method may include forming semiconductor patterns in the through-holes.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a thin layer structure comprising insulating layers and gate layers alternately and repeatedly stacked on a substrate; forming through-holes that penetrate the thin layer structure and expose portions of the substrate; forming first patterns on sidewalls of the gate layers that are exposed by the through-holes, by performing an oxidation process; forming second patterns on the portions of the substrate that are exposed by the through-holes, by performing the oxidation process; removing the second patterns; and forming lower semiconductor patterns in lower regions of the through-holes after removing the second patterns.